Šifra proizvoda: RZZK26A
345,53 €
Cijena sadrži PDV
Mogućnost plaćanja na rate - Saznaj više
Ostvari dodatni popust uz upisivanje promo kupona SMART
Capacity: 4 TB
interface: PCIE GEN 4.0 X4, NVME 2.0
controller: Samsung
nand flash memory: Samsung V-Nand TLC
dram cache memory: Samsung 4 GB DDR4 SDRM with low consumption
dimensions: 80 x 22 x 22 M.2 (2280)...
Capacity: 4 TB
interface: PCIE GEN 4.0 X4, NVME 2.0
controller: Samsung
nand flash memory: Samsung V-Nand TLC
dram cache memory: Samsung 4 GB DDR4 SDRM with low consumption
dimensions: 80 x 22 x 22 M.2 (2280)
SECURITY Read: 7450 MB /s
sequential writing: 6900 Mbps /s
Reading reading (QD 1, thread 1): 22,000 iops
random writing (QD 1, thread 1): 80,000 iops
reading (QD 32, thread 16): /> Random writing (QD 32, thread 16): 1,600,000 iops
energy consumption: at rest 55 MW, reading 6.5 W, writing 5.1 W
reliability: TBW 2400 TB, MTBF 1.5 million hours
Supported Features: Trim, Garbage Collection, 256-bit Encration, TCG/OPAL V2.0, Encrypted Drive IEEE1667
depth | 0.7cm |
width | 7cm |
height | 10cm |
weight | 0.1000kg |
warranty | 60 months |